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Patent Searching and Data


Title:
FORMING METHOD OF TIN-FILM MULTILAYER SUBSTRATE
Document Type and Number:
Japanese Patent JPH03212923
Kind Code:
A
Abstract:

PURPOSE: To improve precision in alignment and thereby to improve productivity by forming an alignment mark in an alignment region simultaneously in a process wherein a thin-film pattern constructed of a thick insulation film is formed on a thin-film pattern constructed of a conductive film and by providing the alignment mark with a stepped part.

CONSTITUTION: A metal film 10 is deposited on the whole surface of a substrate 1 and subjected to photoetching and thereby an alignment region made up of a thin-film pattern P1, a cross pattern 10a and a square pattern 10b is formed. Next, an insulating film 12 constituted of photosensitive polyimide resin is connected about 10μm thick on the whole surface of the substrate 1 and etched, so as to form marks 12a and 12b simultaneously with a pattern P2. A metal film 14 is evaporated thereafter. According to this constitution, a stepped surface 14a always appears even when a plurality of thin films are laminated on the marks 12a and 12b, and productivity is improved without lowering of precision in alignment.


Inventors:
TSUNASHIMA TARO
Application Number:
JP901290A
Publication Date:
September 18, 1991
Filing Date:
January 18, 1990
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H05K3/46; H01L21/027; (IPC1-7): H01L21/027; H05K3/46
Attorney, Agent or Firm:
Sadaichi Igita