Title:
FORMING METHOD FOR ULTRAFINE PATTERN
Document Type and Number:
Japanese Patent JPS58124230
Kind Code:
A
Abstract:
PURPOSE:To form an ultrafine pattern on which fog of an image is not produced in a photolithographic step of manufacturing a semiconductor integrated circuit by exposing the surface of a thin metal film formed on the surface of a resist with condensed electron beam. CONSTITUTION:An X-ray resist 12, e.g., polymethylmethacrylate or the like or polybutadiene of negative type is coated in a thickness of approx. 0.5-1mum, and a thin metal film 13 of Au, Ag, Al... is formed in a thickness of 500- 1,000Angstrom on the surface of the resist 12. Then, an electron beam 14 condensed on the surface is scanned and emitted to the surface of the film 13, thereby locally producing secondary X-ray 15, and the resist 12 under the film 13 is exposed with the X- ray 15. Then, the film 13 is etched, the resist 12 is developed with the pescribed developer. Then, the desired resist pattern 16 can be obtained.
More Like This:
Inventors:
OGAWA KAZUFUMI
Application Number:
JP812982A
Publication Date:
July 23, 1983
Filing Date:
January 20, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G03F7/09; G03F7/20; H01L21/027; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS54116883A | 1979-09-11 | |||
| JPS5413350A | 1979-01-31 |
Attorney, Agent or Firm:
Toshio Nakao