FULL-WAFER INSPECTION METHODS HAVING SELECTABLE PIXEL DENSITY

Japanese Patent JP2017111147

A

PROBLEM TO BE SOLVED: To provide semiconductor wafer inspection systems and methods that substantially optimize the amount of inspection data obtained and analyzed while substantially minimizing the time for collecting and processing the inspection data.SOLUTION: One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of a semiconductor wafer at a maximum measurement-site pixel density ρto obtain measurement data. The method also includes defining a plurality of zones of the surface of the semiconductor wafer. Each of the zones has a measurement-site pixel density ρ, with at least two of the zones having a different sized measurement-site pixel and thus a different measurement-site pixel density ρ. The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement-site pixel densities ρ. The processed measurement data can be used for statistical process control of the process used to form devices on the semiconductor wafer.SELECTED DRAWING: Figure 2A

DAVID M OWEN
LEE BYOUNG-HO
ERIC BOUCHE
HAWRYLUK M ANDREW

JP2016243170A

June 22, 2017

December 15, 2016

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ULTRATECH INC

G01N21/956; G01B11/24; G01J9/02; H01L21/66

JP2015102400A	2015-06-04
JP2004079593A	2004-03-11

WO2012008031A1	2012-01-19
WO2004068066A2	2004-08-12

Hiroharu Kitahara
Yuji Tada
Satoshi Yamauchi
Seiko Ito

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