Title:
FUNCTIONAL DEPOSITED FILM
Document Type and Number:
Japanese Patent JPS6424468
Kind Code:
A
Abstract:
PURPOSE:To construct a functional film, excellent in film quality, high in responsiveness to doping, and easily controllable with stability in terms of conductivity even when deposited on a substrate built of an inexpensive material by a method wherein the number of hydrogen atoms and the rate of crystal grain region per volume are kept within specified limits in a ZnSe film. CONSTITUTION:In a ZnSe:H film where hydrogen atoms occupy 1-4atom%, the crystal grain region occupies 65-85volume%. In this functional deposited film, dangling bond among atoms constituting the film is reduced to a desired level. With such a film, introduction is possible of a P-type dopant, highly effective introduction of such a dopant may be accomplished quite easily, stress is reduced to a desired level, and electrical and mechanical characteristics are quite excellent. An N-type dopant may also be introduced into a ZnSe:H with ease, which produces an excellent functional deposited film of the N-type conductivity. On a supporting substrate 101, an N-type semiconductor layer 102, a P-type semiconductor layer 103, and an electrode 104 are provided, in that order, for the completion of a photosensor 100.
Inventors:
NAKAGAWA KATSUMI
ISHIHARA SHUNICHI
ARAO KOZO
FUJIOKA YASUSHI
SAKAI AKIRA
KANAI MASAHIRO
ISHIHARA SHUNICHI
ARAO KOZO
FUJIOKA YASUSHI
SAKAI AKIRA
KANAI MASAHIRO
Application Number:
JP17992687A
Publication Date:
January 26, 1989
Filing Date:
July 21, 1987
Export Citation:
Assignee:
CANON KK
International Classes:
H01L31/04; G06F9/48; H01L21/205; H01L21/365; H01L31/0248; H01L31/0296; H01L31/0392; H01L31/068; H01L31/18; (IPC1-7): H01L21/205; H01L31/04; H01L31/08
Attorney, Agent or Firm:
Toyoki Ogigami