Title:
FUSE STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
Document Type and Number:
Japanese Patent JP2004119965
Kind Code:
A
Abstract:
To provide a fuse structure capable of shortening the length of a fuse circuit and improving an operational speed, and a semiconductor memory device using it.
A fuse structure comprises first and second fuses, and the first and second fuses have one end and the other end each. One end of the first fuse is connected to the other end in a straight line. The second fuse has one end arranged clear of one end of the first fuse by a first interval, and has the other end arranged clear of the other end of the first fuse by a second interval. One-side ends of the first and second fuses have the same or a narrower widths than those of the other ends of the first and second fuses.
Inventors:
KYO SHOSEKI
CHOI JONG-HYUN
HWANG SANG-KI
CHOI JONG-HYUN
HWANG SANG-KI
Application Number:
JP2003298069A
Publication Date:
April 15, 2004
Filing Date:
August 22, 2003
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/82; H01L21/8242; H01L23/525; H01L27/10; H01L27/108; G11C29/00; (IPC1-7): H01L21/8242; H01L21/82; H01L27/10; H01L27/108
Domestic Patent References:
| JP2000150821A | 2000-05-30 | |||
| JPH06310603A | 1994-11-04 | |||
| JPH0430462A | 1992-02-03 | |||
| JP2002076122A | 2002-03-15 | |||
| JP2002270692A | 2002-09-20 | |||
| JP2000114382A | 2000-04-21 |
Foreign References:
| KR20010029286A | 2001-04-06 |
Attorney, Agent or Firm:
Makoto Hagiwara