Title:
GaN-SYSTEM HETEROJUNCTION FIELD-EFFECT TRANSISTOR AND METHOD FOR CONTROLLING ITS CHARACTERISTIC
Document Type and Number:
Japanese Patent JP3709437
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a structure of a heterojunction field-effect transistor of a semiconductor of a wide-band gap system by which negative resistance can be developed with high controllability.
SOLUTION: An n-type GaN layer is provided near a two-dimensional electronic channel which is formed at AlGaN/GaN heterojunction, and a drain electrode is simultaneously brought into contact with the AlGaN layer and the n-type GaN layer of the surface.
Inventors:
Chow Dong Hyun
Shimizu Sansato
Moto Okumura
Shimizu Sansato
Moto Okumura
Application Number:
JP2002061561A
Publication Date:
October 26, 2005
Filing Date:
March 07, 2002
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L21/28; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP6120520A | ||||
| JP2001185559A |
Other References:
E.B.Cohen, et.al.,"A 2DEG/LOW-TEMPERATURE-GROWN GaAs DUAL CHANNEL HETEROSTRUCTURE TRANSISTOR",Superlattices and Microstrucures,1995年,Vol.17, No.4,pp.345-349
M.Asif Khan, et.al.,"Microwave Operation of GaN/AlGaN-Doped Channel Heterostructure Field Effect Transistors",IEEE Electron Device Letters,1996年 7月,Vol.17, No.7,pp.325-327
M.Asif Khan, et.al.,"Microwave Operation of GaN/AlGaN-Doped Channel Heterostructure Field Effect Transistors",IEEE Electron Device Letters,1996年 7月,Vol.17, No.7,pp.325-327