Title:
GaN系III-V族化合物半導体発光素子
Document Type and Number:
Japanese Patent JP5434882
Kind Code:
B2
Abstract:
A GaN-based III-V group compound semiconductor light-emitting element having high light-emitting efficiency and high reliability at a light-emitting wavelength of 440 nm or more is provided. A GaN-based semiconductor laser element 10 has a laminated structure of: a stripe-shaped convex portion 18 made of a surface layer of a sapphire substrate 12, a buffer layer 14 and a first GaN layer 16, and on the sapphire substrate, a second GaN layer 20, an n-side cladding layer 22, an n-side guide layer 24, an active layer 26, a deterioration prevention layer 28, a p-side guide layer 30, a p-side cladding layer 32 and a p-side contact layer 34. The active layer is formed of a quantum well structure including a GaInN barrier layer 36 and a GaInN well layer 38, and a planar crystal defect prevention layer 40 made of an AlGaN layer is provided on the upper surface or lower surface, or between both the surfaces of the barrier layer and the well layer. Upper portions of the p-side contact layer and the p-side cladding layer are formed as a stripe-shaped ridge 42 and a mesa 44 is formed in parallel with the ridge.
Inventors:
Shigetaka Tomiya
Osamu Goto
Osamu Goto
Application Number:
JP2010238739A
Publication Date:
March 05, 2014
Filing Date:
October 25, 2010
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L33/32; H01L33/06; H01S5/343; H01S5/20; H01S5/34
Domestic Patent References:
| JP10065271A | ||||
| JP2001168471A | ||||
| JP2000232259A | ||||
| JP2002335052A |
Attorney, Agent or Firm:
Shinto International Patent Office