Title:
ＧａＮテンプレート基板およびデバイス基板
Document Type and Number:
Japanese Patent JP6408483
Kind Code:
B2
Abstract:
A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cm−1 in a Raman spectrum is lower than or equal to 1.8 cm−1. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.
Inventors:
Mikiya Ichimura
Yoshitaka Kuraoka
Namerikawa Masahiko
Yoshitaka Kuraoka
Namerikawa Masahiko
Application Number:
JP2015546322A
Publication Date:
October 17, 2018
Filing Date:
September 05, 2014
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B29/38; C23C16/34; C30B25/18; H01L21/20; H01L21/205; H01L21/208
Domestic Patent References:
| JP2007169132A | ||||
| JP2004506323A |
Foreign References:
| US20130234146 | ||||
| WO2013139887A1 | ||||
| WO2004013385A1 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita