PURPOSE: To reduce noise by a gate drive pulse by turning on/off simultaneously an FET poled oppositely and a switching FET.

CONSTITUTION: An N-channel enhancement MESFETTN and a P-channel enhancement MESFETTP are used and a complementary drive clock pulse is fed to a gate of both FETs so as to constitute a transfer gate. In conducting the FET by applying the drive pulse to the gate, a capacitive element at an output terminal is charged by a signal charge and the drive pulse is induced as a noise charge through a capacitance between the gate and output terminal at the same time. The induced electric charge of both FETs is cancelled by the relations of WNWP and LN.WN/μNLP.WP/μP, where WN and WP are gate widths of the FETTN and TP, LN and LP are gate lengths and μN and μP are carrier mobilities respectively.