Title:
窒化ガリウム積層基板および半導体装置
Document Type and Number:
Japanese Patent JP7150269
Kind Code:
B2
Abstract:
There is provided a gallium nitride laminated substrate including: an n-type gallium nitride layer containing an n-type impurity; a p-type gallium nitride layer provided on the n-type gallium nitride layer, containing a p-type impurity, forming a pn-junction at an interface with the n-type gallium nitride layer, and having a p-type impurity concentration and a thickness such that, when a reverse bias voltage is applied to the pn-junction, a breakdown occurs due to a punchthrough phenomenon before occurrence of a breakdown due to an avalanche phenomenon; and an intermediate level layer provided on the p-type gallium nitride layer, containing a p-type gallium nitride which contains the p-type impurity at a higher concentration than the p-type gallium nitride layer, having at least one or more intermediate levels between a valence band and a conduction band, and configured to suppress an overcurrent resulting from a breakdown due to the punchthrough phenomenon in the p-type gallium nitride layer.
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Inventors:
Miyoshi Tomoyoshi
Hiroshi Ota
Horikiri Bunsho
Shibata Masachi
Hiroshi Ota
Horikiri Bunsho
Shibata Masachi
Application Number:
JP2018090879A
Publication Date:
October 11, 2022
Filing Date:
May 09, 2018
Export Citation:
Assignee:
Hosei University
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
H01L29/861; H01L21/20; H01L21/28; H01L29/06; H01L29/868
Domestic Patent References:
| JP2017168557A | ||||
| JP2000340807A | ||||
| JP2017183583A |
Foreign References:
| US20170271148 | ||||
| WO2017169176A1 | ||||
| CN109075212A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana