Title:
Gallium nitride system light emitting diode
Document Type and Number:
Japanese Patent JP6062966
Kind Code:
B2
Abstract:
Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.
Inventors:
Choi, Seung Kyu
Kim, Choi
Chung, Jong Hwan
Nam, Kibon
Kenji Shimoyama
Kurihara incense
Kim, Choi
Chung, Jong Hwan
Nam, Kibon
Kenji Shimoyama
Kurihara incense
Application Number:
JP2014558672A
Publication Date:
January 18, 2017
Filing Date:
February 18, 2013
Export Citation:
Assignee:
SEOUL VIOSYS CO.,LTD.
International Classes:
H01L33/12; H01L33/04
Domestic Patent References:
| JP2008270805A | ||||
| JP2011187621A | ||||
| JP2006332365A | ||||
| JP2008235803A | ||||
| JP2003023216A | ||||
| JP2006135001A | ||||
| JP2007180499A |
Foreign References:
| WO2010150809A1 |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners
Yoshiyuki Kawaguchi
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda
Yoshiyuki Kawaguchi
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda