Title:
THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP3173462
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the mobility of electrons between a source electrode and a drain electrode in a thin-film transistor.
SOLUTION: A channel part 11 of a thin-film transistor is provided with a groove part M. The channel part 11 is formed between a source electrode 6 and a drain electrode 7 so that electrons flow, the groove part M is formed continuously along the flowing direction of of electrons between the source electrode 6 and the drain electrode 7, regulates the two-dimensional scattering of electrons deviating in a side direction from the flow of electrons, and improves the mobility of electrons between the source and drain electrodes.
Inventors:
Hirotaka Yamaguchi
Application Number:
JP16080798A
Publication Date:
June 04, 2001
Filing Date:
June 09, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L29/786; H01L21/336; (IPC1-7): H01L29/786
Domestic Patent References:
| JP62128177A | ||||
| JP11233781A |
Attorney, Agent or Firm:
Naka Kanno