Title:
GAS DETECTING CIRCUIT
Document Type and Number:
Japanese Patent JP2003065991
Kind Code:
A
Abstract:
To provide a gas detecting circuit in which the concentration of a gas being detected can be determined over a wide range, from a low concentration region to a high concentration region, using a semiconductor type gas detecting element.
In a gas detecting circuit where a gas detection voltage is applied to a semiconductor type gas detecting element 1 having a sensitive layer 11 principally comprising a metal oxide semiconductor and a gas detection output is obtained based on the variation of resistance when a gas being detected touches the semiconductor type gas detecting element 1, a constant voltage circuit part 3 for sustaining the gas detection voltage being applied to the gas detecting element 1 at a constant level is provided.
Inventors:
SAI KEISEN
Application Number:
JP2001254384A
Publication Date:
March 05, 2003
Filing Date:
August 24, 2001
Export Citation:
Assignee:
NEW COSMOS ELECTRIC CO
International Classes:
G01N27/12; G01N27/04; (IPC1-7): G01N27/12; G01N27/04
Domestic Patent References:
JPS5023297A | 1975-03-12 | |||
JPS6215450A | 1987-01-23 | |||
JPS51151192A | 1976-12-25 |
Attorney, Agent or Firm:
Shuichiro Kitamura
Previous Patent: GAS SENSOR AND ITS FABRICATING METHOD
Next Patent: EQUIPMENT AND METHOD FOR INSPECTING INNER SURFACE COATING OF METAL CONTAINER
Next Patent: EQUIPMENT AND METHOD FOR INSPECTING INNER SURFACE COATING OF METAL CONTAINER