GAS-DISCHARGING SYSTEM FOR ION IMPLANTATION APPARATUS AND GAS-DISCHARGING METHOD THEREOF

Japanese Patent JP3868605

B2

PROBLEM TO BE SOLVED: To provide a gas-discharging system and a gas discharging method by which corona electric discharge phenomenon generated in the gas-discharging system of an ion implantation apparatus can be suppressed.
SOLUTION: This gas-discharging system has a structure, in which a scrubber 30 is installed on a waste gas line 16a positioned in the inside of an ion implantation apparatus to remove water and specified component gases contained in a waste gas and to suppress noise generation at the time, when the waste gas generated in an ion implantation process is discharged. A plurality of cartridge type scrubbers may be installed to resolve space restriction and to selectively remove the specified component gases. Since a system with a structure in which nitrogen gas is injected for removing water adhering to the inner wall of the waste gas line 16a before a waste gas is discharged through a process tube of the ion implantation apparatus is employed as the gas discharging system, corona electric discharge generation in the inner wall of the waste gas line 16a is suppressed, and the waste gas line 16a is prevented from being burned. Moreover, harmful gases contained in the waste gas, generated in the ion implantation process can be removed together with water and at the same time generation of noise can be prevented.

Aki Hayashi
Kure Aone

JP30618997A

January 17, 2007

November 07, 1997

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Samsung Electronics Co.,Ltd.

C23C14/48; H01J37/18; H01J37/317; H01L21/22; H01L21/265; (IPC1-7): H01J37/317; C23C14/48; H01J37/18; H01L21/265

JP5205685A
JP5082072A
JP55154558A

Makoto Hagiwara

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