Title:
ガス噴射装置及びこれを用いた基板処理装置
Document Type and Number:
Japanese Patent JP5458179
Kind Code:
B2
Abstract:
Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, a partition wall is disposed between the top plate and the injection plate to divide the gas diffusion space into a plurality of separated spaces along the radius direction of the substrate support part, and the inlet is provided in plurality and the plurality of inlets are respectively provided in the separated spaces so that the process gases are independently introduced into the separated spaces.
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Inventors:
Fan Hee
Hopirun
Han Chang Hee
Hopirun
Han Chang Hee
Application Number:
JP2012527814A
Publication Date:
April 02, 2014
Filing Date:
August 24, 2010
Export Citation:
Assignee:
Wonnik IPS Company Limited
International Classes:
C23C16/455; H01L21/205; H01L21/31
Domestic Patent References:
| JP2009516777A | ||||
| JP2001254181A | ||||
| JP2007521633A |
Attorney, Agent or Firm:
Maeda patent office