Title:
Gas manufacture device
Document Type and Number:
Japanese Patent JP5993768
Kind Code:
B2
Abstract:
A gas production apparatus is provided which include: an element laminate having a light receiving section on one side and a conductive substrate on the other, in which laminate a plurality of elements, each including a semiconductor thin film with pn junction, are so laminated on each other as to connect in series to each other; a hydrogen gas generator formed on a surface of a first element located on the light receiving section side; a first electrolysis chamber including the hydrogen gas generator; an oxygen gas generator formed on a back surface of the conductive substrate; a second electrolysis chamber including the oxygen gas generator; and an ion-permeable but gas-impermeable diaphragm provided between the first and second electrolysis chambers.
Inventors:
Naotoshi Sato
Application Number:
JP2013068993A
Publication Date:
September 14, 2016
Filing Date:
March 28, 2013
Export Citation:
Assignee:
FUJIFILM Corporation
Artificial Photosynthetic Chemistry Process Technology Research Association
Artificial Photosynthetic Chemistry Process Technology Research Association
International Classes:
C25B9/19
Domestic Patent References:
| JP2003288955A | ||||
| JP2012107280A | ||||
| JP2012256470A | ||||
| JP2007525593A |
Foreign References:
| WO2013005770A1 |
Other References:
Daisuke YOKOYAMA,H2 Evolution From Water on Modified Cu2ZnSnS4 Photoelectrode under Solar Light,Applied Physics Express,日本,2010年10月 1日,Vol.3, No.10,pp.101202-1~101202-3
Attorney, Agent or Firm:
Nozomi Watanabe
Haruko Sanwa
Hideaki Ito
Fumio Mitsuhashi
Haruko Sanwa
Hideaki Ito
Fumio Mitsuhashi