Title:
GAS SENSOR
Document Type and Number:
Japanese Patent JP2000258375
Kind Code:
A
Abstract:
To provide a gas sensor good in the adhesion to a substrate and using an oxide semiconductor membrane good in response sensitivity in its element part.
A gas-sensitive element 4 comprising a binary oxide semiconductor based on SnO2 and Zn containing Zn2SnO4 is formed on the comb-tooth electrode formed on an alumina substrate. A thick or thin film heater for controlling element characteristics is built in the alumina substrate. A metal such as Pd, Pt, Co, Cu or Au can be added to the binary oxide semiconductor for the purpose of enhancing detection sensitivity.
Inventors:
ISHIDA NOBORU
FUMA TOSHIHIRO
SUGAYA SATOSHI
INOUE TAKAHARU
OSHIMA TAKAFUMI
FUMA TOSHIHIRO
SUGAYA SATOSHI
INOUE TAKAHARU
OSHIMA TAKAFUMI
Application Number:
JP6216099A
Publication Date:
September 22, 2000
Filing Date:
March 09, 1999
Export Citation:
Assignee:
NGK SPARK PLUG CO
International Classes:
G01N27/12; (IPC1-7): G01N27/12
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