Title:
ガス供給機構及び半導体製造システム
Document Type and Number:
Japanese Patent JP6546874
Kind Code:
B2
Abstract:
The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
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Inventors:
Yuki Hosaka
Umezawa Yoshihiro
Toshiki Nakajima
Uda Mayo
Kenichi Shimono
Umezawa Yoshihiro
Toshiki Nakajima
Uda Mayo
Kenichi Shimono
Application Number:
JP2016080216A
Publication Date:
July 17, 2019
Filing Date:
April 13, 2016
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; F16K5/04
Domestic Patent References:
| JP2015138810A | ||||
| JP57068972U | ||||
| JP2011153700A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Omori Tetsuhei
Yoshiki Kuroki
Junji Kashiwaoka
Omori Tetsuhei