To provide a gate drive circuit, capable of reducing power consumption of the gate drive circuit by regenerating discharge energy of a gate to a power source at the driving a MOS transistor, even in the MOS transistor that is connected between the power source and an output.
The gate drive circuit includes an H-side drive circuit DH, capable of adding a predetermined voltage to a gate HVG of a MOS transistor Q1 that is connected between a first power source VCC1 and the output OUT, switches S1 to S3, an inductor L1, a diode D1, and a control section CL. The control section CL turns off all the switches S1, S2, and S3 when the predetermined voltage is added to the gate of the MOS transistor Q1 by the H-side drive circuit DH; turns on the switches S1 and S3, when the addition of the predetermined voltage to the gate HVG of the MOS transistor Q1 is canceled; and turns on the switch S2 and turns off the switch S3 after the voltage of the gate HVG of the MOS transistor Q1 reaches a low level.
Kyousei Tamura
Masahiro Ishino
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