To switch an IGBT at a high speed, by controlling a control input terminal in a gate driver circuit of the IGBT of push-pull connecting respectively a PNP transistor, an NPN transistor, etc., by two FETs with their gates connected in common.

A push-pull driver is constituted by an upper/lower transistor 15, 21 of PNP, NPN connection. By injecting charges to a gate of an IGBT13 discharged, switching of the IGBT can be performed at a high speed, also to set a PNP transistor to an upper side, consequently to prevent decreasing gate drive voltage of the IGBT13 only by Vsat voltage of the transistor, so as to obtain sufficient gate voltage for controlling the IGBT13. A predriver is constituted by FETs 18, 24. Consequently, high speed injection/discharge of charge can be performed in a base of a driver transistor of the IGBT13, and high speed switching of the IGBT13 can be performed.