Title:
ゲート絶縁膜、有機薄膜トランジスタ、及び有機薄膜トランジスタの製造方法
Document Type and Number:
Japanese Patent JP6455007
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a gate insulation film in which film quality is not changed by heating, chemical treatment and the like for forming electrodes and the like, and which can maintain high flatness when an organic semiconductor layer is formed, and to provide an organic thin film transistor using the gate insulation film, and a method for manufacturing the same.SOLUTION: A gate insulation film is formed by curing: (A) a compound obtained by reacting (a) a dicarboxylate, or a tricarboxylic acid or an acid anhydride thereof and (b) a tetracarboxylic acid or an acid dianhydride thereof, where a molar ratio of a/b is 0.1 to 10, with a compound obtained by reacting a bisphenol type epoxy compound with an ethylenic unsaturated bond group-containing monocarboxylic acid ; (B) a polymerizable monomer having at least one ethylenic unsaturated bond; and (C) a composition containing an epoxy compound. Also provided are An organic transistor in which the composition is applied on a gate electrode and is cured, and a method for manufacturing the same.
Inventors:
Shinya Oku
Makoto Mizukami
Tokito Shizushi
Masaomi Takano
Hiroaki Yamada
Shuhei Hayashi
Makoto Mizukami
Tokito Shizushi
Masaomi Takano
Hiroaki Yamada
Shuhei Hayashi
Application Number:
JP2014153912A
Publication Date:
January 23, 2019
Filing Date:
July 29, 2014
Export Citation:
Assignee:
Nippon Steel Chemical & Material Co., Ltd.
Yamagata University
Yamagata University
International Classes:
H01L29/786; C08F290/06; H01L21/28; H01L21/283; H01L21/312; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2012195580A | ||||
| JP2008009401A | ||||
| JP2011122151A |
Attorney, Agent or Firm:
Kazuya Sasaki
Katsuo Naruse
Tomohiro Nakamura
Eiichi Sano
Katsumi Hara
Shuji Hisamoto
Katsuo Naruse
Tomohiro Nakamura
Eiichi Sano
Katsumi Hara
Shuji Hisamoto