Title:
GATE SYSTEM OF PHOTOTHYRISTOR WITH OVERVOLTAGE PROTECTING FUNCTION
Document Type and Number:
Japanese Patent JPS61139264
Kind Code:
A
Abstract:
PURPOSE:To prevent a photothyristor from damaging by switching to a healthy optical gate light emitting diode rapidly even if a phototrigger thyristor is fired due to a defect of the diode. CONSTITUTION:Light emitting diodes 8-1,...,8-N connected in parallel with photothyristors 6 apply a light signal to a photoreceptor 12 when a voltage higher than the prescirbed value is applied to the thyristor. Thus, since only the diode 8-2 connected with the photothyristor 6-2 generates a light signal, a '1' output is produced only for the signal 2b converted by the photoreceptor 12 into an electric signal. Thus, when at least one signal of signals 1b-Nb is different from other signals, an incoincidence signal C is generated from an incoincidence detector 13. This signal C closes a switch 14 to switch a DC power source 1 connected with light emitting diode group of a system A with light emitting diode group of a system B.
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Inventors:
INO HIDETOSHI
TAKAHASHI TADASHI
TAKAHASHI TADASHI
Application Number:
JP25851984A
Publication Date:
June 26, 1986
Filing Date:
December 07, 1984
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H02M1/00; H02M1/092; (IPC1-7): H02M1/092
Attorney, Agent or Firm:
Takehiko Suzue