Title:
ANISOTROPIC SELECTIVE NITRIDE ETCHING FOR FEATURING HIGH ASPECT RATIO IN HIGH-DENSITY PLASMA
Document Type and Number:
Japanese Patent JP3155513
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of etching a silicon nitride in a multilayered structure, using an etchant gas containing a fluorocarbon gas, a hydrogen source and a weak oxidant.
SOLUTION: The directionality of a high-density plasma is controlled by applying a power supply such as a RF power supply to a structure, with the high-density plasma being formed through the excitation of an etchant gas. The power supply for controlling the directionality of the plasma is separated from a power supply used for exciting the etchant gas. A fluorocarbon gas is selected from among CF4, C2F6 and C3F8. A hydrogen source is selected from CH2F2, CH3F and H2. A weak oxidant is selected from CO, CO2 and O2.
Inventors:
Michael, David Armacost
Richard, Stephan Weiss
Richard, Stephan Weiss
Application Number:
JP21048298A
Publication Date:
April 09, 2001
Filing Date:
July 27, 1998
Export Citation:
Assignee:
INTERNATL BUSINESS MACH CORP <IBM>
International Classes:
H01L21/3065; H01L21/311; H01L21/302; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
坂口 博 （外１名）