Title:
太陽電池のためのゲルマニウム富化されたシリコン
Document Type and Number:
Japanese Patent JP2013545706
Kind Code:
A
Abstract:
Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.
Inventors:
Kirsht Fritz Gee.
Heuer Matthias
Kaes Martin
Augella Camel
Heuer Matthias
Kaes Martin
Augella Camel
Application Number:
JP2013541051A
Publication Date:
December 26, 2013
Filing Date:
November 23, 2011
Export Citation:
Assignee:
Silicone Materials Incorporated
International Classes:
C30B29/06; C01B33/02; H01L31/04
Domestic Patent References:
| JP2010215455A | 2010-09-30 | |||
| JPS59121193A | 1984-07-13 |
Foreign References:
| WO2010005736A2 | 2010-01-14 | |||
| CN101597794A | 2009-12-09 |
Other References:
JPN6015021719; Ｍｕｋａｎｎａｎ Ａｒｉｖａｎａｎｄｈａｎ: 'Ｈｉｇｈ ｍｉｎｏｒｉｔｙ ｃａｒｒｉｅｒ ｌｉｆｅｔｉｍｅ ｉｎ Ｇａ-ｄｏｐｅｄ Ｃｚｏｃｈｒａｌｓｋｉ-ｇｒｏｗｎ ｓｉｌｉｃｏｎ ｂｙ Ｇｅ ｃｏｄｏｐｉｎｇ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ９４，０７２１０２（２００９）, 2009
Attorney, Agent or Firm:
Hatsushi Shimizu
Masao Haruna
Hirotaka Yamaguchi
Toshi Gobe
Ryuichi Inoue
Toshimitsu Sato
Koichi Niimi
Tomohiko Kobayashi
Shinichi Watanabe
Masato Ozeki
Yoshihiro Igarashi
Kazuya Kawamoto
Masao Haruna
Hirotaka Yamaguchi
Toshi Gobe
Ryuichi Inoue
Toshimitsu Sato
Koichi Niimi
Tomohiko Kobayashi
Shinichi Watanabe
Masato Ozeki
Yoshihiro Igarashi
Kazuya Kawamoto