Title:
GETTERING METHOD
Document Type and Number:
Japanese Patent JPS5844726
Kind Code:
A
Abstract:
PURPOSE:To extinguish a crystal defect formed to the surface by a scar by condensing laser beams having 1.5-15mum wavelength into a semiconductor and selectively shaping the scar. CONSTITUTION:The laser beams having the wavelength passing the semiconductor, such as Si, GaAs, InP, etc. are condensed into a sample 3 through a lens 2 having a short focus. Laser output I, the diameter a of the beams, the focal distance f, etc. are selected, the beams are condensed at a position in depth x in the semple 3, and the sink of the crystal defect is formed. Accordingly, since the sink is not annealed out during treatment at a high temperature and is positioned near an element forming surface (the surface), an impurity having a small diffusion constant is also gettered to the sink, and an excellent gettering effect is displayed for time longer than conventional methods. The method also has an advantage of which the surface of a substrate is also annealed by the laser beams.
Inventors:
SAWADA YASUSHI
KARAKI TOSHIROU
WATANABE JIYUNJI
KARAKI TOSHIROU
WATANABE JIYUNJI
Application Number:
JP14253081A
Publication Date:
March 15, 1983
Filing Date:
September 11, 1981
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/322; (IPC1-7): H01L21/322
Domestic Patent References:
| JPS566432A | 1981-01-23 | |||
| JPS5618480A | 1981-02-21 | |||
| JPS56105641A | 1981-08-22 | |||
| JPS4825816A | 1973-04-04 | |||
| JPS5618430A | 1981-02-21 |
Attorney, Agent or Firm:
Junnosuke Nakamura