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Title:
グラフェン構造体の形成方法および形成装置
Document Type and Number:
Japanese Patent JP6960813
Kind Code:
B2
Abstract:
A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

Inventors:
Ryota Ifuku
Takashi Matsumoto
Application Number:
JP2017180049A
Publication Date:
November 05, 2021
Filing Date:
September 20, 2017
Export Citation:
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Assignee:
東京エレクトロン株式会社
International Classes:
C01B32/186; C01B32/18; C23C16/26; C23C16/511; H01L21/205; H05H1/46
Domestic Patent References:
JP2013100205A
JP2017033749A
Other References:
平松美根男、堀勝,プラズマ化学気相堆積法を用いたカーボンナノウォールの作製,真空,日本,2006年,49巻/6号,pp.368-372
MALESEVIC, Alexander et al.,Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition,Nanotechnology,2008年07月30日,Vol.19/No.30,pp.1-6
Attorney, Agent or Firm:
Hiroshi Takayama