Title:
グラフィンのn-ドーピング方法
Document Type and Number:
Japanese Patent JP2014518827
Kind Code:
A
Abstract:
The present disclosure provides an n-doping method of graphene, including supplying a reaction gas containing a carbon source and heat to a substrate and reacting to grow graphene on the substrate; and n-doping the graphene by a doping solution containing an n-type dopant or a vapor containing an n-type dopant, an n-doped graphene produced by the method, and a device including the n-doped graphene.
Inventors:
Hong, Byung Hee
Kim, Eun Sung
Kim, Eun Sung
Application Number:
JP2013556556A
Publication Date:
August 07, 2014
Filing Date:
March 02, 2012
Export Citation:
Assignee:
Grafens Square Inc.
International Classes:
C01B31/02; H01L21/205; H01L21/223; H01L21/228; H01L29/06; H01L29/861; H01L29/868; H01L51/05; H01L51/30
Domestic Patent References:
| JP2006240898A | 2006-09-14 | |||
| JP2009212469A | 2009-09-17 | |||
| JP2009043939A | 2009-02-26 |
Foreign References:
| WO2010113518A1 | 2010-10-07 | |||
| WO2008023669A1 | 2008-02-28 | |||
| US20100133480A1 | 2010-06-03 |
Other References:
JPN6014044257; Ｈａｅ Ｋｙｕｎｇ Ｊｅｏｎｇ ｅｔ ａｌ．: 'Ｍｏｄｉｆｉｃａｔｉｏｎ ｏｆ ｔｈｅ ｅｌｅｃｔｒｏｎｉｃ ｓｔｒｕｃｔｕｒｅｓ ｏｆ ｇｒａｐｈｅｎｅ ｂｙ ｖｉｏｌｏｇｅｎ' Ｃｈｅｍｉｃａｌ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ．４９８， Ｉｓｓｕｅｓ１-３, 20100930, Ｐ．１６８-１７１
Attorney, Agent or Firm:
Longhua International Patent Service Corporation