To provide a silicon single crystal with a high efficiency, in the case of raising the crystal in a specified no fault region or in a specified fault region.
In this method of manufacturing a single crystal by Czochralski method, a graphite heater for manufacturing the single crystal is at least equipped with a terminal part where electric current is supplied and a cylindrical heating part by resistance heating, and located to encircle a crucible containing a feed melt liquid. The heating part is equipped with a heating slit part alternatively with upper slits coming down from its top and lower slits coming up from its bottom, and the upper slits and the lower slits comprise longer ones and shorter ones, and the heating distribution of the heating part is changed by making the number of the shorter upper slits more than the number of the shorter lower slits.
SOEDA SATOSHI