Title:
GRINDING REPAIR DEVICE AND GRINDING REPAIR METHOD FOR SURFACE OF SILICON WAFER
Document Type and Number:
Japanese Patent JP2023175737
Kind Code:
A
Abstract:
To provide a device and a method capable of grinding the surface of a silicon wafer and efficiently and effectively repairing a processed altered layer and flattening the roughness by using a pulse laser.SOLUTION: A grinding repair device (1) according to the present invention includes a wafer feed unit (20) that holds a silicon wafer (W) such that the silicon wafer can rotate, move, and/or tilt, a grinding unit (10) that grinds the surface of the silicon wafer, and a laser irradiation repair device (100) that irradiates the ground surface of the silicon wafer with laser, and the laser irradiation repair device (100) includes a measuring device (102) that measures the surface condition and/or shape of the silicon wafer, a laser irradiation unit (101) that irradiates the ground surface of the silicon wafer with laser, a displacement mechanism (120), and a control device (103) that controls an irradiation condition and/or irradiation atmosphere of the laser on the basis of measurement data of the measuring device.SELECTED DRAWING: Figure 1
Inventors:
TSURU TAIRA
Application Number:
JP2023144059A
Publication Date:
December 12, 2023
Filing Date:
September 06, 2023
Export Citation:
Assignee:
TOKYO SEIMITSU CO LTD
International Classes:
H01L21/304; B23K26/03; B23K26/064; B23K26/354; B24B1/00; B24B9/00; B24B49/10; B24B49/12
Attorney, Agent or Firm:
Spring Patent Attorney Corporation