Title:
GROUP 4 METAL COMPLEX, PRODUCTION METHOD THEREOF, PREPARATION METHOD OF GROUP 4 METAL-CONTAINING THIN FILM
Document Type and Number:
Japanese Patent JP2016147819
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a group 4 metal complex having excellent thermal stability and proper vapor pressure and suitable as a material for preparing a group 4 metal-containing thin film.SOLUTION: There is provided the group 4 metal complex represented by the general formula (1), where M represents a group 4 metal atom, R, R, Rand Reach represent independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R, Rand Reach represent independently an alkyl group having 1 to 8 carbon atoms, R, Rand Reach represent independently an alkyl group having 1 to 6 carbon atoms or a di (alkyl having 1 to 3 carbon atoms) amino group.SELECTED DRAWING: None
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Inventors:
TADA KENICHI
MANIWA ATSUSHI
FURUKAWA YASUSHI
MANIWA ATSUSHI
FURUKAWA YASUSHI
Application Number:
JP2015024589A
Publication Date:
August 18, 2016
Filing Date:
February 10, 2015
Export Citation:
Assignee:
TOSOH CORP
SAGAMI CHEMICAL RES INST
SAGAMI CHEMICAL RES INST
International Classes:
C07F19/00; C07F17/00; C23C16/18; H01L51/05; H01L51/30
Domestic Patent References:
| JP2014510733A | 2014-05-01 | |||
| JP2005171291A | 2005-06-30 | |||
| JP2018503247A | 2018-02-01 |
Foreign References:
| WO2001053362A1 | 2001-07-26 |
Other References:
P. CASSOUX, R. CHOUKROUN, O. CYR-ATHIS, R. FEURER, F. LAURENT, R. MORANCHO, F. TEYSSANDIER AND L. VA: "Molecular precursors for OMCVD preparation of TiN, VN, TiC and VC thin-film ceramic materials", TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, vol. 19, JPN6018036561, 1994, pages 185 - 188, ISSN: 0003883198
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