Title:
GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2022015556
Kind Code:
A
Abstract:
To provide a group III nitride semiconductor element and a manufacturing method of the same, capable of alleviating strain between a group III nitride semiconductor layer containing In and a semiconductor layer adjacent to the group III nitride semiconductor layer.SOLUTION: A well layer 161 is a group III nitride semiconductor layer containing In, and a barrier layer 162 is a group III nitride semiconductor layer. In at least one of a step of growing the well layer 161 and a step of growing the barrier layer 162, the well layer 161 is brought into contact with the barrier layer 162. In the step of growing the well layer 161 and the step of growing the barrier layer 162, hydrogen-containing gas is used as carrier gas. The flow rate of the hydrogen gas in the step of growing the barrier layer 162 is greater than the flow rate of the hydrogen gas in the step of growing the well layer 161.SELECTED DRAWING: Figure 2
Inventors:
OKUNO KOJI
Application Number:
JP2020118480A
Publication Date:
January 21, 2022
Filing Date:
July 09, 2020
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L21/205; C23C16/34; C30B25/14; C30B29/38; H01L33/32
Domestic Patent References:
| JP2014038913A | 2014-02-27 | |||
| JP2001015809A | 2001-01-19 | |||
| JPH11340580A | 1999-12-10 | |||
| JPH1154794A | 1999-02-26 | |||
| JP2015159250A | 2015-09-03 | |||
| JP2012119560A | 2012-06-21 | |||
| JP2009231591A | 2009-10-08 |
Foreign References:
| CN110190160A | 2019-08-30 |
Attorney, Agent or Firm:
Fujitani Osamu
Akinori Isshiki
Tomohiro Kakutani
Akinori Isshiki
Tomohiro Kakutani