Title:
ＩＩＩ族窒化物半導体膜およびその製造方法
Document Type and Number:
Japanese Patent JPWO2003015143
Kind Code:
A
Inventors:
Hideto Miyake
Harumasa Yoshida
Takehiro Terada
Kazumasa Hiramatsu
漆戸 達 -- size
Harumasa Yoshida
Takehiro Terada
Kazumasa Hiramatsu
漆戸 達 -- size
Application Number:
JP2002007748W
Publication Date:
February 20, 2003
Filing Date:
July 30, 2002
Export Citation:
Assignee:
Nagoya Industrial Science Research Institute
International Classes:
(IPC1-7): H01L21/3065; C30B25/18; H01L31/0248; C30B29/38; H01L33/00; H01L21/205
Attorney, Agent or Firm:
Yohei Kobayashi
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