Title:
GROUP III NITRIDE SEMICONDUCTOR NANOPARTICLE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2022056781
Kind Code:
A
Abstract:
To provide a method for efficiently manufacturing core shell particles without having oxidation, contamination and the like on the surfaces of core particles when manufacturing core shell type group III nitride nanoparticles.SOLUTION: A method for manufacturing group III nitride semiconductor nanoparticles, capable of manufacturing core shell type nanoparticles including a core consisting of group III nitride and a shell consisting of group III nitride having a composition different from that of the group III nitride and covering the core by synthetic reaction in a liquid phase comprises: the first step of inputting a material including group III elements constituting the group III nitride of the core and the group III nitride of the shell into the same reaction vessel and controlling a temperature profile from the input of the material to the formation of the core shell type nanoparticles served as a final product to form nanoparticles used as the core; and the second step of forming the shell by the residual group III material. A reaction temperature in the first step is different from that in the second step.SELECTED DRAWING: Figure 3
Inventors:
KAZAMA TAKUYA
TAMURA WATARU
MIYAKE YASUYUKI
MURAMATSU JUNJI
KANIE KIYOSHI
TAMURA WATARU
MIYAKE YASUYUKI
MURAMATSU JUNJI
KANIE KIYOSHI
Application Number:
JP2020164720A
Publication Date:
April 11, 2022
Filing Date:
September 30, 2020
Export Citation:
Assignee:
STANLEY ELECTRIC CO LTD
International Classes:
C30B29/38; C30B19/02; C30B19/10; H01L21/208
Attorney, Agent or Firm:
Sannozaka Patent Office
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