Title:
ＩＩＩ族窒化物基板およびＩＩＩ族窒化物結晶の製造方法
Document Type and Number:
Japanese Patent JP7117732
Kind Code:
B2
Abstract:
A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
Inventors:
Mori Yusuke
Yoshimura Masashi
Masayuki Imanishi
Kei Kitamoto
Junichi Takino
Tomoaki Sumi
Okayama Yoshio
Yoshimura Masashi
Masayuki Imanishi
Kei Kitamoto
Junichi Takino
Tomoaki Sumi
Okayama Yoshio
Application Number:
JP2018131691A
Publication Date:
August 15, 2022
Filing Date:
July 11, 2018
Export Citation:
Assignee:
National University Corporation Osaka University
Panasonic Holdings Co., Ltd.
Panasonic Holdings Co., Ltd.
International Classes:
C30B29/38; C30B25/20
Domestic Patent References:
| JP2015207618A | ||||
| JP2015098413A | ||||
| JP2003069156A | ||||
| JP4562000B2 | ||||
| JP2016094309A | ||||
| JP2018058718A | ||||
| JP2012017502A | ||||
| JP10202045A |
Foreign References:
| US20170183776 |
Attorney, Agent or Firm:
Michiko Matsutani
Hiroshi Okabe
Kazuhisa Inaba
Hiroshi Okabe
Kazuhisa Inaba
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