GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER HAVING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR FORMED THEREON, AND GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR ELEMENT

Title:

GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER HAVING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR FORMED THEREON, AND GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JP2013241337

Kind Code:

A

Abstract:

To produce a group III nitride-based compound semiconductor having uniformly oriented crystal axis, and having m-plane as a main surface.

A projection part having a side surface whose off-angle from c-plane is ≤45° is formed on a sapphire substrate having a-plane as a main surface. Subsequently, trimethyl aluminum is supplied at 300-420°C, to thereby form an aluminum layer having a thickness of ≤40 Å, and then to obtain an aluminum nitride layer after being nitrided. Consequently, a group III nitride-based compound semiconductor is epitaxially grown only from a side surface having an off-angle of ≤45° from the c-plane of the projection part in the sapphire substrate having the a-plane as the main surface. Thus, a group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.

Inventors:

OKUNO KOJI
NITTA SHUGO
SAITO YOSHIKI
USHIDA YASUHISA
NAKADA NAOYUKI
BOYAMA SHINYA

Application Number:

JP2013177108A

Publication Date:

December 05, 2013

Filing Date:

August 28, 2013

Export Citation:

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Assignee:

TOYODA GOSEI KK

International Classes:

C30B29/38; H01L21/205

Domestic Patent References:

JP2006232640A	2006-09-07
JP2000106455A	2000-04-11
JP2002362999A	2002-12-18
JP2000106455A	2000-04-11
JP2002362999A	2002-12-18
JP2006232640A	2006-09-07

Attorney, Agent or Firm:

Osamu Fujitani

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