To provide a group III nitride semiconductor device having a trench or mesa-structure, in which leak of a current and a decrease in withstand voltage are prevented.
A GaN layer 2 is grown on a C-face sapphire substrate 1, and a T-shaped USG film 3 is fabricated on the GaN layer 2 so that the side surface of the USG film 3 is parallel to an A-face and an M-face of the GaN layer 2. After that, the GaN layer 2 is dry-etched using the USG film 3 as a mask. Fig.2a and 2b show that the M-face has less roughness than the A-face. Subsequently, the GaN layer 2 is wet-etched with a TMAH solution. Fig.2c and 2d show that the roughness on the A-face and M-face are eliminated, and especially, the M-face has a mirror surface. Thus, where a trench groove side surface or a mesa-etching side surface is used as the M-face, the leak current and decrease in withstand voltage of the group III nitride semiconductor device can be prevented.
| JP6980626 | Semiconductor device |
| JP4461673 | Active electronic devices and devices |
HAYASHI EIKO
SUGIMOTO MASAHIRO
TOYOTA MOTOR CORP
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