Title:
GROWING METHOD FOR CRYSTAL OF CARBON-ADDED COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH06326042
Kind Code:
A
Abstract:
PURPOSE: To obtain a specific high carbon concentration compound semiconductor crystal in high temperature growth.
CONSTITUTION: A valve 8a for a raw material bomb 8 is opened, and the gaseous raw material of arsenic trimethyl is forwarded into a reaction pipe 1 while hydrogen gas is bubbled in an arsenic trimethyl raw material. The gaseous raw material of antimony trimethyl is sent simultaneously into the reaction pipe 1 from a raw material bomb 9 and the raw gas of gallium trimethyl from a raw material bomb 7, thus forming a carbon-added gallium arsenide thin-film. The flow rate of the gaseous raw material of antimony trimethyl is controlled, thus controlling added carbon concentration.
Inventors:
KODA HIROKI
WADA KAZUMI
WADA KAZUMI
Application Number:
JP23771093A
Publication Date:
November 25, 1994
Filing Date:
September 24, 1993
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
C30B25/02; H01L21/205; (IPC1-7): H01L21/205; C30B25/02
Attorney, Agent or Firm:
Masataka Kobayashi