PURPOSE: To furnish a method for crystal growth of a compound semiconductor which enables growth of an epitaxial growth layer of a sphalerite type of an excellent crystal quality, with excellent reproducibility.

CONSTITUTION: In a method for crystal growth of a compound semiconductor wherein CdZnSe is made to grow epitaxially by an MOCVD method, a growth temperature Tg is set in a temperature region being higher than the higher one of Ti and Tj and lower than the lower one of Tk and Tl and Tc1 and Tg are set to be Tc1<Tg, when the transition temperature of CdSe is denotede by Tc1 and the low temperature side and the high temperature side of a step at which a growth rate becomes a determined rate of material transport by Ti and Tk respectively and when the transition temperature of ZnSe is denoted by Tc2 and the low temperature side and the high temperature side of the step at which the growth rate becomes the determined rate of material transport by Tj and Tl respectively.