PURPOSE: To provide the subject method so designed that, in growing high- melting single crystal by pull method, iridium crucible breakage is prevented due to its abnormal expansion caused by the ambient gas trapped therein in solidifying residual melt after completing the growth.

CONSTITUTION: On cooling a grown single crystal while immersing it in the residual melt even after completing its growth, the residual melt can be solidified while providing it with crystallinity, resulting in volume contraction of the melt and developing a gap between the crucible and the solidified melt, thus facilitating the ambient gas' escape and preventing crack developments etc. in the crucible without applying excessive stress thereon.