Title:
GROWING METHOD FOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5339299
Kind Code:
A
Abstract:
PURPOSE: To grow good quality Ba2 (SixGe1-x)2 TiO8 single crystals contg. no undesired phase and no bubbles by setting a temp. gradient just above the surface of a melt and a pulling rate within each specified range and pulling seed crystals.
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Inventors:
KIMURA MASAKAZU
TSURUTA YOSHIO
TSURUTA YOSHIO
Application Number:
JP11403576A
Publication Date:
April 11, 1978
Filing Date:
September 22, 1976
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C01G23/00; C30B15/14; C30B29/32; (IPC1-7): B01J17/18; C01G23/00