PURPOSE: To remarkably improve the degree of super-structural order of a GaInAs crystal in a state of keeping the vapor pressures or flow rates of raw materials constant by performing an epitaxial growth under specific conditions of the GaInAs crystal having a lattice strain on a GaAs substrate.

CONSTITUTION: A 3-5 mixed crystal substrate is placed in a chamber and the molecular beam epitaxy to grow the GaInAs crystal using a solid or gas contg. group 3 and 5 elements is performed as follows. The crystal growth is conducted at 450 to 650°C growth temp., in a ≤100 (group 3)/(group 5) ratio using gallium, indium and solid or gaseous arsenic as the group 5 raw material in the presence of the molecular beams volatilized from the solid raw materials in the chamber. The grown face of the substrate is at a <15° angle to the face equivalent to the (001) plane. The structure consisting of the group 3 atoms, i.e., Ga and In, on the group 3 sublattice in the Ga×InI-xAs crystal which is formed on the GaAs substrate and has the different lattice constant from that of the substrate, is controlled by controlling the orientation and the angle of the grown face from the face equivalent to the (001) plane.