Title:
GROWTH METHOD FOR II-VI COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3271225
Kind Code:
B2
Abstract:
PURPOSE: To provide a growth method for a p-type II-IV compound semiconductor whose acceptor concentration is enough high.
CONSTITUTION: When a p-type II-VI compound semiconductor such as p-type ZnSe is formed by a metal organic chemical vapor deposition or a molecular beam epitaxy using raw gas material, organic compound such as diisopropyl amine wherein at least one nitrogen atom is contained and at least two groups whose molar weight is at least 12, properly larger than 36 are bonded to the nitrogen atom is used as p-type dopant.
Inventors:
Atsushi Toda
Daisuke Imanishi
Daisuke Imanishi
Application Number:
JP14123694A
Publication Date:
April 02, 2002
Filing Date:
May 31, 1994
Export Citation:
Assignee:
ソニー株式会社
International Classes:
C30B23/02; C30B25/02; H01L21/205; H01L21/365; (IPC1-7): H01L21/205; H01L21/365
Domestic Patent References:
| JP4137537A | ||||
| JP4160100A | ||||
| JP4206883A | ||||
| JP7161644A | ||||
| JP786186A |
Attorney, Agent or Firm:
Masatomo Sugiura
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