Title:
GROWTH OF SINGLE CRYSTAL AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JP3772376
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for raising a single crystal little in crystal defects by inhibiting the generation of depressions in an area around the raised crystal to prevent the production of polycrystals without locally heating an interface between the solid and the liquid, and to provide a device therefor.
SOLUTION: This method for raising a single crystal comprises lifting the single crystal from the melted liquid of a raw material by a liquid-sealed czochralski method. Therein, the improvement comprises immersing the tip of a cylinder having a larger inner diameter than the target diameter of the straight body portion of the raised crystal in a liquid sealing agent, rotating a crucible and the raised crystal mutually in reverse directions to prevent the generation of depressions on the interface between the solid and the liquid and simultaneously lifting the raised crystal with a lifting shaft. And the device is used for the method.
Inventors:
Katsuji Hashio
Shinichi Sawada
Masami Tatsumi
Shinichi Sawada
Masami Tatsumi
Application Number:
JP4585396A
Publication Date:
May 10, 2006
Filing Date:
March 04, 1996
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B27/02; C30B29/42; (IPC1-7): C30B27/02; C30B29/42
Domestic Patent References:
| JP4240186A | ||||
| JP7165490A | ||||
| JP63102770U | ||||
| JP1301579A | ||||
| JP4092887A | ||||
| JP8151299A |
Attorney, Agent or Firm:
Chigashi Kubota
Toshiko Hiraishi
Ryoichi Hagiwara
Atsushi Anzai
Toshiko Hiraishi
Ryoichi Hagiwara
Atsushi Anzai
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