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Title:
HIGHLY FUNCTIONAL Ga2O3 SINGLE CRYSTAL FILM AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
Japanese Patent JP2008303119
Kind Code:
A
Abstract:

To produce a highly functional Ga2O3 single crystal thin film which can be used as a light source emitting light in a far ultraviolet region where the wavelength is 250-270 nm by a simple means.

A -Ga2O3 single crystal wafer, prepared by utilizing an optical floating-zone melting method, is used as a substrate, and then a -Ga2O3 single crystal film is grown on the (100) plane of the substrate at a temperature of 800C by a molecular beam epitaxy method.


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Inventors:
OHIRA SHIGEO
ARAI NAOKI
OSHIMA TAKAHITO
FUJITA SHIZUO
Application Number:
JP2007152984A
Publication Date:
December 18, 2008
Filing Date:
June 08, 2007
Export Citation:
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Assignee:
NIPPON LIGHT METAL CO
UNIV KYOTO
International Classes:
C30B29/16; C23C14/08; C23C14/24; C30B23/08; H01L21/205; H01L33/30
Attorney, Agent or Firm:
Okada Manri



 
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