To provide blanks for a halftone phase shift photomask having a satisfactory transmittance to short-wavelength light and usable in high resolution lithography by exposure with KrF excimer laser light.
In the halftone phase shift photomask in which a halftone phase shift layer on a transparent substrate comprises a chromium compound-base monolayer, the chromium compound contains at least a fluorine atom besides a chromium atom. Since the photomask ensures a prescribed transmittance or above even in exposure with short-wavelength light and can be used even in exposure with KrF excimer laser light of 248 nm wavelength, on the like high resolution lithography can be achieved. Since the photomask enables masking in much the same way as a conventional photomask, yield is enhanced and cost is lowered.
MORI HIROSHI
TAKAHASHI MASAYASU
HAYASHI NAOYA
MITSUBISHI ELECTRIC CORP
| JPH06167803A | 1994-06-14 |