PURPOSE: To prevent the reaction of an etched member to ozone from happening by a method wherein an wafer formed of resist pattern is irradiated with far ultraviolet rays and hard-baked in inert gas atmosphere under low pressure.
CONSTITUTION: An N2 substitution chamber 25 is provided in front of a subchamber 12 through a gate valve 24 in a main chamber 16 while the inner atmosphere of N2 substitution chamber 25 containing a wafer 11 to be processed is preliminarily exhausted from an exhaust port 26 to be substituted with N2 gas led from a gas leading-in port 27 turning into N2 gas atmosphere under low pressure. On the other hand, the wafer 11 formed of resist pattern is irradiat ed with far ultraviolet rays and hard-baked so that no O2 may exist in the subchamber 12 not to produce O3 by the far ultravilet ray irradiation. Through these procedures, Cu grains on the exposed surface of Al film do not react to O3 producing no oxide as the resultant compound at all so that the thermal resistance and the dry-etching resistance of resist contained in the resist pattern may be improved.
KOJIMA MASAYUKI
MIYAZAWA KUNIKO
KOIKE ATSUYOSHI
HITACHI MICROCUMPUTER ENG