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Title:
HEAT-CONDUCTIVE ALN CERAMICS SUBSTRATE
Document Type and Number:
Japanese Patent JPS6184036
Kind Code:
A
Abstract:

PURPOSE: To assure remarkable heat-conductivity of AlN ceramics substrate with purity of 95% by a method wherein the separated part of AlN needle type polycrystal is limited to 1/3 or less of substrate thickness.

CONSTITUTION: The purity of AlN ceramics is recommended to exceed 95% in terms of the thermal conductivity while adding 0.1W5wt% of Y2O3 as sintering assistant. AlN powder is formed into a substrate 2 by means of sintering it in N2 at 1,600W1,850°C as it is sealed up in a fire resistant vessel after removing grease. At this time, AlN needle type polycrystal 1 with Al-Si-O- N composition formed on the side only shall not exceed 1/3 of substrate thickness (t) while if they are formed on both sides, the total thickness shall be also limited to 1/3 of the same. In such a constitution, the heat-conductivity of AlN ceramics substrate may not be deteriorated at all.


Inventors:
MIZUNOYA NOBUYUKI
SUGIURA YASUYUKI
Application Number:
JP20470884A
Publication Date:
April 28, 1986
Filing Date:
September 30, 1984
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H05K1/03; C04B35/581; H01L21/48; H01L23/15; (IPC1-7): C04B35/58; H01L23/12; H05K1/03
Domestic Patent References:
JPS54100410A1979-08-08
JPS53102310A1978-09-06
Attorney, Agent or Firm:
Saichi Suyama