Title:
レーザ熱処理用熱誘導式反射率スイッチ
Document Type and Number:
Japanese Patent JP2004503938
Kind Code:
A
Abstract:
A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
Inventors:
Howluck m
Tolwar Somit
Wang Yang
Thompson Michael Oh
Tolwar Somit
Wang Yang
Thompson Michael Oh
Application Number:
JP2002511380A
Publication Date:
February 05, 2004
Filing Date:
April 30, 2001
Export Citation:
Assignee:
Ultra tech ink
International Classes:
B23K26/18; H01L21/265; H01L21/268; H01L21/324; (IPC1-7): H01L21/268; H01L21/265
Domestic Patent References:
| JPH09283468A | 1997-10-31 | |||
| JPH03239318A | 1991-10-24 | |||
| JPH0574704A | 1993-03-26 | |||
| JPH07124776A | 1995-05-16 | |||
| JPS6448410A | 1989-02-22 | |||
| JPS63151015A | 1988-06-23 |
Foreign References:
| US4496608A | 1985-01-29 |
Attorney, Agent or Firm:
Yukio Fuse
Inoue Ichi
Mitsue Obuchi
Inoue Ichi
Mitsue Obuchi