To provide a material, in which thermal conductivity is 500 W/(m K) or higher and is higher than that of AlN or SiC sintered body, and coefficient of thermal expansion is 3.0 to 6.5×10-6/K and which is close to that of semiconductor devices, such as InP and GaAs.
A high thermal conductivity diamond sintered body is provided, wherein it does not contain in the inside, diamond particles, in which peak of particle size distribution is 5 μm or larger and 100 μm or smaller, are contained 60 vol.% or higher and 90 vol.% or lower with respect to the whole sintered body; the remaining portion substantially consists of cooper, at least a plurality of diamond particles which constitute the sintered body are directly coupled to each other; cooper which constitutes the sintered body is not oxidized substantially; and the amount of oxygen in the sintered body is 0.025 weight% or lower. A diamond heat sink for mounting a semiconductor is provided, wherein the sintered body in which surface treatment is carried out is used as a base material and at least two faces per pair of surfaces or more, which face each other, are covered with a metal film.
MORIGAMI HIDEAKI
AWAJI TAKAHIRO
NAKAI TETSUO
Yuko Ishikawa
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