HEAT-TREATING DEVICE FOR SEMICONDUCTOR SUBSTRATE AND METHOD

Japanese Patent JP3443779

B2

PURPOSE: To make it possible to realize a uniform surface temperature in a heat- treating device for a semiconductor substrate without needing a rotating mechanism for the semiconductor substrate by a method wherein the device is provided with a driving mechanism for moving a light heating mechanism as the interval between the light heating mechanism and the semiconductor substrate held in a heat-treating container is held.
CONSTITUTION: This heat-treating device is provided with a heat-treating container 103, which holds a semiconductor substrate 101 in its interior and has at least a part, which opposes to the surface to be heat-treated of the substrate 101 and is formed of a light-transmitting member, and a light heating mechanism 104 for heating the substrate 101 by emitting light on the substrate 101. Such a heat-treating device for the semiconductor substrate is constituted into such a structure that it is provided with a driving mechanism 106, which moves the mechanism 104 as the interval between the mechanism 104 and the substrate 101 held in the container 103 is held. For example, the heating lamp mechanism 104 with 20 tungsten halogen lamps 105 installed at a pitch of 13mm is coupled with the mechanism 106 through a connecting bar 110 and the mechanism 104 is made to drive in such a way that it is moved periodically in the direction parallel to the surface of the surface of the substrate 101.

JP3996663	Lamp heating type heat treatment equipment
JPS6215860	MANUFACTURE OF GAAS SCHOTTKY GATE TYPE FET

Akihiro Miyauchi
Hironori Inoue

JP6840093A

September 08, 2003

March 26, 1993

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株式会社日立製作所

H01L21/26; H01L21/31; H01L21/324; (IPC1-7): H01L21/31; H01L21/26; H01L21/324

JP3276625A
JP55182A
JP61129811A
JP63227014A

Tatsuyuki Unuma

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